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        JEM-2100F型場發射高分辨透射電子顯微鏡

        作者:        發布于:2010-09-11

          

          

            

            型  號:JEM-2100F STEM/EDS 

          生產國別、公司:日本,JEOL

          主要技術指標:

            TEM 力:0.23nm(點),0.102nm(晶格)

            STEM力:0.20nm(晶格)

            最小束斑尺寸:0.5nm

            放大倍數:50~1100萬倍

            加速電壓:160 200kV

            EDS X射線能量分辯力:132eV

            元素分析范圍:BU

            分析感量:10-1410-21g

          主要應用于材料的形貌、內部組織結構和晶體缺陷的觀察;物相鑒定,包括晶胞參數的電子衍射測定;高分辨晶格和結構像觀察;納米微粒和微區的形態、大小及化學成分的點、線和面元素定性定量和分布分析。樣品要求為非磁性的穩定的薄膜或粉末,視其分析內容進行樣品制備。

          

          Model: JEM 2100F STEM/EDS

          Manufacturer: JEOL, Japan

          Main Specifications

            TEM Point Resolution0.23nm, Lattice Resolution: 0.102nm

            Lattice Resolution on STEM Image: 0.20nm

          Minimum spot size: 0.5nm

          Accelerating Voltage:160-200 kV

          Magnification: 50~1100k

          X ray Energy Resulotion on EDS: 132eV

          Scope of analytical elements: B ~U 

          Sensitivty: 10-1410-21g

          The analytic system has the advantage of undertaking at the same time synthetic analyses for material topography, microstructure and elements. It is applied mostly to the observation to the morphology or tissue structure of materials and crystal defects; phase identification including the measurements of lattice parameters by ED and Lattice image and atomic structure image; the investigation of size of nano-particles, and the qualitative or quantitative analyses to point , line and mapping of components at the analysis microarea.

          

          

          

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