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        儀器設備

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        Helios NanoLab G3型聚焦離子/電子雙束系統(FIB)

        作者:        發布于:2018-05-23
        測試中心冊子11.30_頁面_09_圖像_0002.jpg
         
            型號:Helios NanoLab G3

         

          生產國別廠家:美國Thermo Fisher 公司

         

          主要技術指標:

         

            1、電子束分辨率:在最佳工作距離:0.6nm@15kV~2kV

         

        在束交叉點分辨率:0.6nm@15kV

         

        0.9nm@5kV

         

        1.2nm @ 1kV

         

        2、離子束分辨率:交叉點分辨率:4.0nm@30kV

         

         ( 采用Multi-edge 平均值法測量方式)

         

        2.5nm@30kV

         

        ( 采用Selective-edge 平均值法測量方式)

         

        3、電子束加速電壓:0.02~30 kV

         

        4、離子束加速電壓:0.5~30 kV

         

          基本原理及用途:該設備應用電子束進行高分辨觀測,離子束進行微納結構加工,用于金屬、半導體、電介質、多層膜結構等固體樣品上制備微納結構;高質量定點TEM樣品制備;離子束刻蝕、離子束沉積等。

         

         

         

          Model: Helios NanoLab G3

         

          Manufacturer: Thermo Fisher, USA

         

          Main Specifications:

         

            1, electron beam resolution: the best working distance: 0.6nm@15kV~2kV

         

        cross point: 0.6nm@15kV

         

        0.9nm@5kV

         

        1.2nm @ 1kV

         

        2. Ion beam resolution: cross point: 4.0nm@30kV

         

        (the Multi-edge mean method)

         

        2.5nm@30kV

         

        (the Selective-edge mean method)

         

        3. Electron beam acceleration voltage: 0.02~30 kV

         

        4. Ion beam acceleration voltage: 0.5~30 kV

         

        Basic principles and applications: The machine uses electron beam for high resolution observation, and uses ion beam for micro nano structure fabrication. It is used to prepare micro nano structure on solid samples such as metal, semiconductor, dielectric and multilayer film structure. It is also used for high quality TEM sample preparation at specific area, ion beam etching, ion beam deposition, etc.

         

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