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        Talos F200S型場發射高分辨透射電子顯微鏡

        作者:        發布于:2018-05-24
        測試中心冊子11.30_頁面_06_圖像_0004.jpg
         型號: Talos F200S

        生產國別廠家:美國Thermo Fisher 公司(原荷蘭FEI 公司)

        主要技術指標:

        1、電子槍加速電壓:20-200kV

        2、最小束斑尺寸 0.3nm

        3、TEM點分辨率0.25nm,信息分辨率0.12nm,STEM分辨率0.16nm

        4、放大倍數:TEM25 - 1.05M倍;STEM150 - 230M

        5、EDS能量分辨率≤136 eV (Mn-Ka)

         

        基本原理:利用高能電子束照射厚度不超過100納米的薄的樣品,電子與樣品中的原子碰撞而改變方向,由于樣品厚度、元素組成、晶體結構和缺陷等的不同,透過樣品的電子會產生不同的花樣或圖像襯度,這些花樣或圖像包含了樣品微觀形貌結構的相關信息。

         

        主要用途:主要用于材料在納米及原子尺度的微觀形貌、結構、缺陷和界面的研究,材料微區成分的定性和定量分析,以及納米材料顯微結構的三維表征。

         

        Model:  Talos F200S

        Manufacturer:  Thermo Fisher, USA

        Main Specifications:

        1.     Electronic gun accelerate voltage range: 20~200KV

        2.     Minimum spot size: 0.3nm

        3.     TEM Point Resolution: 0.25nm,TEM information resolution: 0.12nm, STEM resolution: 0.16nm

        4.     TEM magnification range: 25~1.05Mx, STEM magnification range: 150~230Mx

        5.     X-ray energy resolution on EDS≤136 eV (Mn-Ka)

         

        Principle:  High-energy electron beam irradiate thin specimen (thickness no more than 100nm). Electrons collide with atoms of specimen and change directions. For the reason that different specimens have different thickness, element compositions, lattice structure and defects, transmitted electrons will generate different patterns or image contrasts, which contain specimen’s microstructure information and micromorphology information.

         

        Main Application: This machine can characterize materials’ micromorphology, microstructure, lattice defects, crystal interfaces and phase interfaces in nanoscale level and atomic level, can analyze materials’ micro-area chemical composition qualitatively or quantitatively, and can simulate material’s microstructure by using 3D tomography technology. 

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